Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVG103R0NSTR
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| Gate Charge(Qg) | 171nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.264nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 223W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.542nF |
| Type | N-Channel |
N-Channel 100V 180A 223W Surface Mount TO-263-2L