Hangzhou Silan Microelectronics SVF9N90PN

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF9N90PN

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Specifications

Gate Charge(Qg)30.52nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)7.1pF
RDS(on)1.4Ω@10V
Input Capacitance(Ciss)1.6342nF
TypeN-Channel

Technical details

900V 9A 4V 240W 1.4Ω@10V N-Channel TO-3PN Single FETs, MOSFETs RoHS

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