Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF7N65F
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVF7N65F.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 98pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 789pF |
N-Channel 650V 7A 46W Through Hole TO-220F-3