Hangzhou Silan Microelectronics SVF7N65CD

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF7N65CD

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation89W
RDS(on)-
Number1 N-channel

Technical details

N-Channel 650V 7A 89W Surface Mount TO-252

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