Hangzhou Silan Microelectronics SVF740T

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF740T

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Specifications

Gate Charge(Qg)16.18nC@10V
Drain to Source Voltage400V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)5.06pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)801pF
TypeN-Channel

Technical details

N-Channel 400V 10A 130W Through Hole TO-220

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