Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF6N60F
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVF6N60F.
| Drain to Source Voltage | 600V |
|---|---|
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 1.35Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690.7pF |
600V 6A 2V 42W 1.35Ω@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS