Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF6N60D
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVF6N60D.
| Gate Charge(Qg) | 13.32nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 83.6pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 1.35Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690.7pF |
| Type | N-Channel |
N-Channel 600V 6A 125W Surface Mount TO-252-2(DPAK)