Hangzhou Silan Microelectronics SVF65R950CDTR

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF65R950CDTR

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation148W
RDS(on)850mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.038nF

Technical details

N-Channel 650V 9A 148W Surface Mount TO-252-2L

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