Hangzhou Silan Microelectronics SVF4N150PF

Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF4N150PF

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Specifications

Drain to Source Voltage1.5kV
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation73W
RDS(on)5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)1.034nF

Technical details

N-Channel 1.5kV 4A 73W Through Hole TO-3PF

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