Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF2N60RM
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| Gate Charge(Qg) | 8.92nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 3.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250pF |
600V 2A 4V 3.7Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS