Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF2N60M
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| Gate Charge(Qg) | 5.67nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 35.7pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF |
| RDS(on) | 4.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250.1pF |
| Type | N-Channel |
N-Channel 600V 2A 34W Through Hole TO-251-3