Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF28N50PN
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVF28N50PN.
| Gate Charge(Qg) | 92nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| RDS(on) | 180mΩ@10V |
| Input Capacitance(Ciss) | 3.842nF |
| Type | N-Channel |
N-Channel 500V 28A 417W Through Hole TO-3P-3