Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF25NE50PN
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| Gate Charge(Qg) | 51.83nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 260W |
| RDS(on) | 270mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| Input Capacitance(Ciss) | 3.4665nF |
| Type | N-Channel |
500V 25A 4V 260W 270mΩ@10V N-Channel TO-3P-3 Single FETs, MOSFETs RoHS