Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF20NE50PN
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVF20NE50PN.
| Gate Charge(Qg) | 58.38nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 425pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 252W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.03pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.504nF |
| Type | N-Channel |
N-Channel 500V 20A 252W Through Hole TO-3P-3