Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF1N60B
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| Gate Charge(Qg) | 3.45nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 9W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF |
| RDS(on) | 11Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 120.3pF |
| Type | N-Channel |
600V 1A 4V 9W 11Ω@10V 1 N-channel N-Channel TO-92-2.5mm Single FETs, MOSFETs RoHS