Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF18N60F
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| Gate Charge(Qg) | 46.35nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.85pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3948nF |
600V 18A 2V 54W 360mΩ@10V 1 N-channel TO-220F-3L Single FETs, MOSFETs RoHS