Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF18N50F
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 282pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 260mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.32nF |
| Type | N-Channel |
N-Channel 500V 18A 54W Through Hole TO-220