Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF14N65CFJ
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| Gate Charge(Qg) | 32.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.67nF |
650V 14A 2V 45W 600mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS