Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVF12N60CF
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 51W |
| RDS(on) | 750mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Input Capacitance(Ciss) | 1.367nF |
| Type | N-Channel |
600V 12A 4V 51W 750mΩ@10V N-Channel TO-220F-3 Single FETs, MOSFETs RoHS