Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVDZ24NT
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
| Type | N-Channel |
N-Channel 55V 17A 45W Through Hole TO-220