Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVD9Z24NT
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 135pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 175mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 447pF |
| Type | P-Channel |
P-Channel 55V 12A 45W Through Hole TO-220