Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVD640T
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.108nF |
| Type | N-Channel |
200V 18A 4V 150W 150mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS