Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVD501DEAGTR
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| Gate Charge(Qg) | 2.75nC@400V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 2.92pF |
| Current - Continuous Drain(Id) | 30mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 0.12pF |
| RDS(on) | 700Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.03pF |
| Type | N-Channel |
N-Channel 600V 30mA 0.8W Surface Mount SOT-23