Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVD3205T
No reviews yet — be the first to review Hangzhou Silan Microelectronics SVD3205T.
| Gate Charge(Qg) | 67nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 740pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 169pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.365nF |
| Type | N-Channel |
N-Channel 55V 110A 200W Through Hole TO-220F-3