Hangzhou Silan Microelectronics · FETs & Power MOSFETs · MPN SVD1055SATR
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 175mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 20.5pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 450pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 55V 17A 2W Surface Mount SOP-8