Guangdong Hottech · FETs & Power MOSFETs · MPN SI2309DS
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| Gate Charge(Qg) | 2.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 200mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 310pF |
| Vgs | ±20V |
P-Channel 60V 2A 1W Surface Mount SOT-23