Guangdong Hottech SI2303

Guangdong Hottech · FETs & Power MOSFETs · MPN SI2303

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)1.9A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)330mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)155pF
TypeP-Channel

Technical details

30V 1.9A 3V 350mW 330mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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