Guangdong Hottech SI2301

Guangdong Hottech · FETs & Power MOSFETs · MPN SI2301

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Specifications

Configuration-
Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)115mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF

Technical details

P-Channel 20V 3A 1.6W Surface Mount SOT-23

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