Guangdong Hottech MMBTH10

Guangdong Hottech · Transistors (BJTs) · MPN MMBTH10

No reviews yet — be the first to review Guangdong Hottech MMBTH10.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)650MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23

Related Transistors (BJTs)