Guangdong Hottech HKTQ80N03

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTQ80N03

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.92nF

Technical details

N-Channel 30V 80A 37W Surface Mount PDFN3333-8

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