Guangdong Hottech HKTQ65N03

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTQ65N03

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.92nF

Technical details

N-Channel 30V 65A 37W Surface Mount PDFN3333

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