Guangdong Hottech HKTQ60N02

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTQ60N02

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Specifications

Gate Charge(Qg)77nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 20V 50A 83W Surface Mount PDFN3333

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