Guangdong Hottech HKTQ30P03

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTQ30P03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)81nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation32W
RDS(on)7.4mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

30V 60A 1.6V 32W 7.4mΩ@10V 1 P-Channel P-Channel PDFN3333 Single FETs, MOSFETs RoHS

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