Guangdong Hottech HKTQ30N03

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTQ30N03

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Specifications

Gate Charge(Qg)23nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)9.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.015nF

Technical details

N-Channel 30V 30A 21W Surface Mount PDFN-8L(3x3)

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