Guangdong Hottech HKTD70N04

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTD70N04

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation108W
RDS(on)9.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)188pF
Number1 N-channel
Input Capacitance(Ciss)4.3nF

Technical details

N-Channel 40V 70A 108W Surface Mount TO-252

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