Guangdong Hottech HKTD5N50

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTD5N50

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Specifications

Gate Charge(Qg)12.8nC@5V
Drain to Source Voltage500V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation22W
RDS(on)1.7Ω@10V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)480pF

Technical details

N-Channel 500V 5A 22W Surface Mount TO-252

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