Guangdong Hottech HKTD50N03

Guangdong Hottech · FETs & Power MOSFETs · MPN HKTD50N03

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Specifications

Gate Charge(Qg)9.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)940pF

Technical details

N-Channel 30V 50A 37W Surface Mount TO-252

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