Guangdong Hottech · FETs & Power MOSFETs · MPN HKTD4N65
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| Gate Charge(Qg) | 8.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 23.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 2.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
N-Channel 650V 4A 23.1W Surface Mount TO-252