Guangdong Hottech · FETs & Power MOSFETs · MPN HKTD120N04
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| Gate Charge(Qg) | 100nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.62nF |
| Vgs | ±20V |
N-Channel 40V 120A 110W Surface Mount TO-252