Guangdong Hottech BC858A

Guangdong Hottech · Transistors (BJTs) · MPN BC858A

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO30V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
ConfigurationStandalone
Number1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV

Technical details

30V 800 1 PNP 100mA SOT-23 Single Bipolar Transistors RoHS

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