Guangdong Hottech BC850B

Guangdong Hottech · Transistors (BJTs) · MPN BC850B

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))600mV

Technical details

45V 800 1 NPN NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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