Guangdong Hottech BC639

Guangdong Hottech · Transistors (BJTs) · MPN BC639

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation830mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

100V 250 1 NPN NPN 1A TO-92 Single Bipolar Transistors RoHS

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