Guangdong Hottech 2N7002DW

Guangdong Hottech · FETs & Power MOSFETs · MPN 2N7002DW

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Specifications

Gate Charge(Qg)650pC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation300mW
RDS(on)1.9Ω@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)12pF

Technical details

N-Channel Array 60V 0.3A 0.3W Surface Mount SOT-363

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