GOSEMICON · FETs & Power MOSFETs · MPN GBS65060TOA
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 90nC |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 329W |
| RDS(on) | 55mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
| Type | N-Channel |
N-Channel 650V 50A 329W Through Hole TO-220