GOSEMICON GBS65041CTOB

GOSEMICON · FETs & Power MOSFETs · MPN GBS65041CTOB

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage650V
Configuration-
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation450W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 650V 54A 450W Through Hole TO-247

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