GOSEMICON GBS60037TOB

GOSEMICON · FETs & Power MOSFETs · MPN GBS60037TOB

No reviews yet — be the first to review GOSEMICON GBS60037TOB.

Specifications

Gate Charge(Qg)146nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)34mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.3nF
TypeN-Channel

Technical details

N-Channel 600V 60A 300W Through Hole TO-247

Related FETs & Power MOSFETs