GOSEMICON GBS032R4PMBR

GOSEMICON · FETs & Power MOSFETs · MPN GBS032R4PMBR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)50nC@10V
Current - Continuous Drain(Id)168A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation83W
RDS(on)2.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)100pF
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

N-Channel 30V 168A 83W PDFN3.3x3.3-8

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