GOSEMICON GBS030R8TPMAR

GOSEMICON · FETs & Power MOSFETs · MPN GBS030R8TPMAR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)1.9nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)1.05mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 30V 200A 75W Surface Mount PDFN5x6-8L

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