GOSEMICON GBS030R8TLAR

GOSEMICON · FETs & Power MOSFETs · MPN GBS030R8TLAR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)1.9nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)1.25mΩ@10V
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

30V 200A 2V 83W 1.25mΩ@10V N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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