GOSEMICON · FETs & Power MOSFETs · MPN GBG65200NMAR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 1.9nC |
| Current - Continuous Drain(Id) | 11A |
| Output Capacitance(Coss) | 30pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 83W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF |
| RDS(on) | 140mΩ |
| Input Capacitance(Ciss) | 68pF |
650V 11A 1.4V 83W 140mΩ PDFN-9L(8x8) Single FETs, MOSFETs RoHS